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power amplifier, 13 w 8.5 - 11.75 ghz rev. v4 maap - 015030 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 1 features ? 12 w x - band power amplifier ? 21 db large signal gain ? 41 dbm saturated pulsed output power ? 40% power added efficiency ? on chip gate bias circuit ? 100% on - wafer dc & rf power tested ? 100% visual inspection to mil - std - 833 ? bare die description the maap - 015030 two stage 8.5 - 11.75 ghz gaas mmic power amplifier has a saturated pulsed output power of 41 dbm and a large signal gain of 21 db. the power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. this device is well suited for communication and radar applications. ordering information part number package maap - 015030 - die die in vacuum release gel pack maap - 015030 - dieev1 direct gate bias sample board maap - 015030 - dieev2 on chip gate bias sample board * restrictions on hazardous substances, european union directive 2011/65/eu. functional schematic p ad configuration pad no. function pad no. function 1 v g 1 12 gnd 2 bias circuit gnd 13 v d 2 3 no connection 14 v d 1 4 v b 1 15 v g 2 5 v b 2 16 bias circuit gnd 6 bias circuit gnd 17 v b 2 7 v g 2 18 v b 1 8 v d 1 19 gnd 9 v d 2 20 bias circuit gnd 10 gnd 21 v g 1 11 rf out 22 rf in r f o u t r f i n b i a s 1 4 5 7 8 9 b i a s 2 1 1 5 1 4 1 3 v b 1 v d 1 v d 2 v g 1 v g 2 v b 2 v b 1 v d 1 v d 2 v g 1 v g 2 v b 2 1 1 1 7 1 8 2 2 6 1 6 2 2 0
power amplifier, 13 w 8.5 - 11.75 ghz rev. v4 maap - 015030 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 2 electrical specifications: freq. = 8.5 - 11.5 ghz, t a = +25c, duty cycle = 5%, p in = 20 dbm, v g = - 0.9 v parameter units min. typ. max. gain (large signal) (8.5 - 11.5 ghz) gain (large signal) (11.5 - 11.75 ghz) db 20 19 21 gain db 25 gain flatness db 1 input return loss db 12 output return loss db 10 saturated output power (8.5 - 11.5 ghz) saturated output power (11.5 - 11.75 ghz) dbm 40 39 41 power added efficiency 8.5 - 9.0 ghz 9.0 - 10.0 ghz 10.0 - 11.75 ghz % 35 40 40 drain bias voltage v 8.0 drain current a 5 5.5 absolute maximum ratings 1,2 parameter absolute maximum input power +23 dbm drain voltage +8.5 v gate voltage - 2.0 v < v g < - 0.7 v bias voltage - 6.5 v < v b < - 4.5 v drain current < 6.0 a gate current < 30 ma operating temperature - 40c to +85c junction temperature 3,4 +175c 1. exceeding any one or combination of these limits may cause permanent damage to this device. 2. macom does not recommend sustained operation near these survivability limits. 3. operating at nominal conditions with t j +175c will ensure mttf > 1 x 10 6 hours. 4. junction temperature (t j ) = t a + ? jc * (v * i) typical thermal resistance ( ? jc) = 5.7c/w. a) for t a = 25c, t j = 175c @ 8 v, 3.29 a b) for t a = 85c, t j = 175c @ 8 v, 1.97 a handling procedures please observe the following precautions to avoid damage: static sensitivity gallium arsenide integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these devices.
power amplifier, 13 w 8.5 - 11.75 ghz rev. v4 maap - 015030 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 3 bonding diagram - on chip bias 5 bonding diagram - direct gate bias 5 mmic bare die 5. components c1 - c8 are all 100 pf chips.
power amplifier, 13 w 8.5 - 11.75 ghz rev. v4 maap - 015030 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 4 typical performance curves over voltage gain vs. frequency input return loss vs. frequency output return loss vs. frequency reverse isolation vs. frequency 10 15 20 25 30 8 9 10 11 12 vg = 0.8 v vg = 0.9 v vg = 1.0 v frequency (ghz) -80 -70 -60 -50 -40 -30 -20 8 9 10 11 12 vg = 0.8 v vg = 0.9 v vg = 1.0 v frequency (ghz) -20 -15 -10 -5 0 8 9 10 11 12 vg = 0.8 v vg = 0.9 v vg = 1.0 v frequency (ghz) -20 -15 -10 -5 0 8 9 10 11 12 vg = 0.8 v vg = 0.9 v vg = 1.0 v frequency (ghz)
power amplifier, 13 w 8.5 - 11.75 ghz rev. v4 maap - 015030 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 5 gain vs. frequency output power vs. frequency drain current vs. frequency pae vs. frequency typical performance curves over voltage 10 15 20 25 30 8 9 10 11 12 vg = 0.8 v vg = 0.9 v vg = 1.0 v frequency (ghz) 30 35 40 45 50 8 9 10 11 12 vg = 0.8 v vg = 0.9 v vg = 1.0 v frequency (ghz) 1 2 3 4 5 6 8 9 10 11 12 vg = 0.8 v vg = 0.9 v vg = 1.0 v frequency (ghz) 0 12 24 36 48 60 8 9 10 11 12 vg = 0.8 v vg = 0.9 v vg = 1.0 v frequency (ghz)
power amplifier, 13 w 8.5 - 11.75 ghz rev. v4 maap - 015030 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 6 typical performance curves over frequency pae vs. input power gain vs. input power output power vs. input power drain current vs. input power gate current vs. input power 1 2 3 4 5 0 4 8 12 16 20 8.5 ghz 9.0 ghz 9.5 ghz 10.0 ghz 10.5 ghz 11.0 ghz 11.5 ghz 11.75 ghz input power (dbm) 25 30 35 40 45 0 4 8 12 16 20 8.5 ghz 9.0 ghz 9.5 ghz 10.0 ghz 10.5 ghz 11.0 ghz 11.5 ghz 11.75 ghz input power (dbm) 10 15 20 25 30 0 4 8 12 16 20 8.5 ghz 9.0 ghz 9.5 ghz 10.0 ghz 10.5 ghz 11.0 ghz 11.5 ghz 11.75 ghz input power (dbm) -0.0040 -0.0020 0.0000 0.0020 0.0040 0 4 8 12 16 20 8.5 ghz 9.0 ghz 9.5 ghz 10.0 ghz 10.5 ghz 11.0 ghz 11.5 ghz 11.75 ghz input power (dbm) 0 10 20 30 40 50 60 0 4 8 12 16 20 8.5 ghz 9.0 ghz 9.5 ghz 10.0 ghz 10.5 ghz 11.0 ghz 11.5 ghz 11.75 ghz input power (dbm)
power amplifier, 13 w 8.5 - 11.75 ghz rev. v4 maap - 015030 7 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 7 gain vs. frequency output power vs. frequency drain current vs. frequency pae vs. frequency typical performance curves over temperature: p in = 19.5 dbm 1 2 3 4 5 6 8 9 10 11 12 -40c -20c +20c +60c +80c frequency (ghz) 0 10 20 30 40 50 60 8 9 10 11 12 -40c -20c +20c +60c +80c frequency (ghz) 10 15 20 25 30 8 9 10 11 12 -40c -20c +20c +60c +80c frequency (ghz) 30 35 40 45 50 8 9 10 11 12 -40c -20c +20c +60c +80c frequency (ghz)
power amplifier, 13 w 8.5 - 11.75 ghz rev. v4 maap - 015030 8 8 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 8 gain vs. input power output power vs. input power drain current vs. input power pae vs. input power typical performance curves over temperature 25 30 35 40 45 0 4 8 12 16 20 -40c -20c +20c +60c +80c input power (dbm) 10 15 20 25 30 0 4 8 12 16 20 -40c -20c +20c +60c +80c input power (dbm) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 4 8 12 16 20 -40c -20c +20c +60c +80c input power (dbm) 0 10 20 30 40 50 60 0 4 8 12 16 20 -40c -20c +20c +60c +80c input power (dbm)
power amplifier, 13 w 8.5 - 11.75 ghz rev. v4 maap - 015030 9 9 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 9 note 1 - biasing the gate biasing is applied in one of the following: 1. direct gate bias: - v g 1 & v g 2 provide the direct gate bias input to the 2 mmic stages. this method of biasing allows the user to control the total drain current without the scaling factor provided by the bias circuit . it is recommended that the gate voltage is supplied by both sides of the die. optimum performance can be achieved with a - 0.9 v operation. 2. bias circuit biasing: - applying - 5v to v b 1 & v b 2 will typically draw 2a with no further adjust- ment necessary. wafer lot variation may result in some devices experiencing higher or lower drain currents than the typical 2 a. it is necessary to connect the bias circuit ground (pad 2,6,16,20) to ground in order for this bias circuit to function correctly. it is recommended that the bias circuits on both sides of the pa are used. note 2 - bias sequence when switching on the pa, in each case, the gate bias must be applied before the drain voltage is applied. both the v d 1 and v d 2 should be biased from the top and bottom sides of the die. application notes applications section note 3 - decoupling circuits each bias pad, v g or v b and the v d 1, v d 2 must have a decoupling capacitor of 100 pf as close to the device as possible, as is shown in the bonding diagrams. in the case where the bias circuit is used the additional bond wire to ground must be made as short as possible. note 4 - pulse operation the performance of the maap - 015030 - bd is characterized under pulsed conditions with a duty cycle of 5% consisting of a pulse width of 5 s ap- plied to the drain. under pulsed conditions the gate is constantly biased using either the on chip bias circuit or using a gate voltage directly applied to the pa. it is recommended that the die is mounted with an adequate thermal solution. note 5 - cw operation the pa is only recommended for cw operation at reduced drain voltages.
power amplifier, 13 w 8.5 - 11.75 ghz rev. v4 maap - 015030 10 10 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 10 die attachment this product is 0.100 mm (0.004") thick and has vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk - pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the macom "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a flux - less gold - tin (ausn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold - tin eutectic (80% au 20% sn) has a melting point of approximately 280oc (note: gold germanium should be avoided). the work station temperature should be 310oc +/ - 10oc. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre - heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5 - 2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. a lum i ni um wir e s h ou l d b e a v oi d ed . thermo - compression bonding is recommended though thermo - sonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonic's are all critical parameters. bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. applications section handling and assembly
power amplifier, 13 w 8.5 - 11.75 ghz rev. v4 maap - 015030 11 11 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 11 application circuit maap - 015030 - die v b 1 v b 2 v b 1/ v b 2/ maap - 015036 - die v g 1 v g 2 v d 1 v d 2 v ss 1/ v ss 2/ v g 1/ v g 2/ v d 1 v d 2 v ss 1 v ss 2 120pf 1nf 2.2 f 120pf 1nf 2.2 f 120pf 120pf 10 10 120pf 1nf 2.2 f 120pf 1nf 2.2 f 50 tx line 50 tx line 120pf 10 120pf 10 47nf 47nf 47nf 47nf
power amplifier, 13 w 8.5 - 11.75 ghz rev. v4 maap - 015030 12 12 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 12 m/a - com technology solutions inc. all rights reserved. information in this document is provided in connection with m/a - com technology solutions inc ("macom") products. these materials are provided by macom as a service to its customers and may be used for informational purposes only. except as provided in macom's terms and conditions of sale for such products or in any separate agreement related to this document, macom assumes no liability whatsoever. macom assumes no responsibility for errors or omissions in these materials. macom may make changes to specifications and product descriptions at any time, without notice. macom makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. no license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. these materials are provided "as is" without warranty of any kind, either express or implied, relating to sale and/or use of macom products including liability or warranties relating to fitness for a particular purpose, consequential or incidental damages, merchantability, or infringement of any patent, copyright or other intellectual property right. macom further does not warrant the accuracy or completeness of the information, text, graphics or other items contained within these materials. macom shall not be liable for any special, indirect, incidental, or consequential damages, including without limitation, lost revenues or lost profits, which may result from the use of these materials. macom products are not intended for use in medical, lifesaving or life sustaining applications. macom customers using or selling macom products for use in such applications do so at their own risk and agree to fully indemnify macom for any damages resulting from such improper use or sale.

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